Q1. Define Resist and give example of EBL resist.

This is question 1 (3 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q1. Write apllications of E-beam LIthography.

This is question 1 (4 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q1. Describe the Electron beam lithography.

This is question 1 (7 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q2. Write basic principles of PLD technique.

This is question 2 (3 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q2. Give Applications of PLD technique.

This is question 2 (4 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q2. Explain pulse laser deposition technique.

This is question 2 (7 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q2. Describe advantages and disadvantages of PLD.

This is question 2 (7 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q3. Write basic principle of E-beam lithography.

This is question 3 (3 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q3. Describe Vector Scan and Roaster Scan.

This is question 3 (4 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

Q3. Explain proximity effect in E-beam lithography.

This is question 3 (7 marks) from the GTU Synthesis of Nanomaterials-II BE Summer 2019 question paper. Subject code: 2143904.

SummerBE2019

Synthesis of Nanomaterials-II — Summer 2019

Subject Code2143904

ProgramBachelor of Engineering

Total Marks70

Questions15

Exam Date19 May 2019

Exam Time02:30 PM TO 05:00 PM

Questions25

Define Resist and give example of EBL resist.

[3 marks]

Write apllications of E-beam LIthography.

[4 marks]

Describe the Electron beam lithography.

[7 marks]

Write basic principles of PLD technique.

[3 marks]

Give Applications of PLD technique.

[4 marks]

Explain pulse laser deposition technique.

[7 marks]

Describe advantages and disadvantages of PLD.

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Write basic principle of E-beam lithography.

[3 marks]

Describe Vector Scan and Roaster Scan.

[4 marks]

Explain proximity effect in E-beam lithography.

[7 marks]

What are secondary electrons in E-Beam Lithography?

[3 marks]

Explain beam focusing and alignment in EBL.

[4 marks]

Explain advantages and disadvantages of EBL.

[7 marks]

Differentiate between positive and negative resist.

[3 marks]

Write note on alignment of nano elements in hybrid nanostructures.

[4 marks]

Explain RF Plasma Chemical Method.

[7 marks]

Give the basic principles of RF plasma chemical method.

[3 marks]

Describe Ion-beam for deposition.

[4 marks]

Write note on application of RF Plasma method.

[7 marks]

Write basic principle of CVD techniques.

[3 marks]

Give applications of CVD technique.

[4 marks]

Describe any one CVD technique.

[7 marks]

Write basic principle of PVD techniques.

[3 marks]

Give applications of PVD technique.

[4 marks]

Describe any one PVD techniques.

[7 marks]